Brus V V

Publications in Math-Net.Ru

1. Graphite/$p$-SiC Schottky diodes prepared by transferring drawn graphite films onto SiC
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  248–253
2. Structural and optical properties of Cu$_{2}$ZnSn(S,Se)$_{4}$ films obtained by magnetron sputtering of a Cu$_{2}$ZnSn alloy target
   
   Fizika Tverdogo Tela, 59:8 (2017),  1619–1623
3. Silicon nanowire array architecture for heterojunction electronics
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  569
4. Optical properties and mechanisms of current flow in Cu$_{2}$ZnSnS$_{4}$ films prepared by spray pyrolysis
   
   Fizika Tverdogo Tela, 58:5 (2016),  1024–1029
5. Low-temperature spray-pyrolysis of FeS$_2$ films and their electrical and optical properties
   
   Fizika Tverdogo Tela, 58:1 (2016),  39–43
6. Electrical and photoelectric properties of $n$-ТiN/$p$-Hg$_{3}$In$_{2}$Te$_{6}$ heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1041–1046
7. Electrical and photoelectric properties of the TiN/$p$-InSe heterojunction
   
   Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  339–343
8. Specific features of the optical and electrical properties of polycrystalline CdTe films grown by the thermal evaporation method
   
   Fizika Tverdogo Tela, 56:10 (2014),  1886–1890
9. Specific features of the recombination loss of the photocurrent in $n$-TiN/$p$-Si anisotype heterojunctions
   
   Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1540–1542
10. Charge-transport mechanisms in heterostructures based on TiO$_2$ : Cr$_2$O$_3$ thin films
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1205–1208
11. Electrical properties of thin-film semiconductor heterojunctions $n$-TiO$_2$/$p$-CuInS$_2$
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1075–1079
12. Electrical properties of anisotype $n$-CdO/$p$-Si heterojunctions
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  926–931
13. Electrical properties of MOS diodes In/TiO$_2$/$p$-CdTe
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  504–508
14. Isotype surface-barrier $n$-TiN/$n$-Si heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  232–236
15. Electrical properties of anisotype $n$-TiN/$p$-Hg$_3$In$_2$Te$_6$ heterojunctions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:6 (2014),  1–6
16. Kinetic properties of TiN thin films prepared by reactive magnetron sputtering
    
    Fizika Tverdogo Tela, 55:11 (2013),  2123–2127
17. Electrical and photoelectric properties of anisotype $n$-TiN/$p$-Si heterojunctions
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1185–1190
18. Charge transport mechanisms in anisotype $n$-ТiО$_2$/$p$-Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  788–792
19. Optical properties of TiО$_2$–MnO$_2$ thin films prepared by electron-beam evaporation
    
    Zhurnal Tekhnicheskoi Fiziki, 82:8 (2012),  110–113
20. Electrical properties of anisotype heterojunctions $n$-CdZnO/$p$-CdTe
    
    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1175–1180
21. On the impedance spectroscopy of structures with a potential barrier
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1035–1038
22. Mechanisms of charge transport in anisotype $n$-TiO$_2$/$p$-CdTe heterojunctions
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1109–1113