Degtyarov Vladimir Evgen'evich

Publications in Math-Net.Ru

1. Numerical simulation of the current–voltage characteristics of bilayer resistive memory based on non-stoichiometric metal oxides
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1275–1278
2. Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1462–1467
3. Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  145–148
4. Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  58–62
5. Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing $\delta$-doped layers
   
   Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  53–57
6. Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures
   
   Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1561–1565
7. Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum
   
   Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1510–1514