Alyabina Natal'ya Alekseevna

Publications in Math-Net.Ru

1. Ge/Si(001) heteroepitaxial layers doped in the HW CVD process by impurity evaporation from a sublimating Ge source
   
   Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  719–724
2. Distribution of charge carrier concentrations in epitaxial Ge and GeSn layers grown on $n^+$-Si(001) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  839–843
3. Tunnel diodes based on $n^{+}$-Ge/$p^{+}$-Si(001) epitaxial structures grown by the hot-wire chemical vapor deposition
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1267–1270
4. A random telegraph signal in tunneling silicon $p$–$n$ junctions with GeSi nanoislands
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  94–101
5. Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique
   
   Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1411–1414
6. Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium
   
   Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  399–405
7. Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions
   
   Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1486–1488