Bugaev Alexandr Sergeyevich

Publications in Math-Net.Ru

1. Energy expenditure upon the formation of the elastically stressed state in the layers of a step-graded metamorphic buffer in a heterostructure grown on a (001) GaAs substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1086–1094
2. Ultrafast dynamics of photoexcited charge carriers in In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As superlattices under femtosecond laser excitation
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  723–728
3. Comparative analysis of strain fields in layers of step-graded metamorphic buffers of various designs
   
   Fizika Tverdogo Tela, 59:10 (2017),  1956–1963
4. Nuclear magnetic resonance study of potassium dihydrophosphate
   
   Fizika Tverdogo Tela, 58:4 (2016),  667–670
5. Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  185–190
6. Study of a MHEMT heterostructure with an In$_{0.4}$Ga$_{0.6}$As channel MBE-grown on a GaAs substrate using reciprocal space mapping
   
   Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1065–1070
7. Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  932–935