|
|
Publications in Math-Net.Ru
-
Полуполярный нитрид алюминия: эпитаксия объемного материала на наноструктурированной кремниевой подложке
Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:4 (2026), 25–28
-
Postgrowth regime optimization of temperature and pressure reduction in HPHT diamond crystal growth method
Zhurnal Tekhnicheskoi Fiziki, 95:2 (2025), 221–231
-
The investigation of the impact of nano-structured AlN/Si(100) templates for the growth of semipolar AlN$(10\bar11)$ layers
Fizika i Tekhnika Poluprovodnikov, 59:1 (2025), 3–7
-
Metalorganic vapor phase epitaxy of AlN layers on a nanostructured AlN/Si(100) template synthesized by reactive magnetron sputtering
Zhurnal Tekhnicheskoi Fiziki, 94:6 (2024), 944–947
-
HVPE epitaxy of semipolar AlN(10$\bar{1}$1) layers on the AlN/Si(100) template
Fizika i Tekhnika Poluprovodnikov, 58:9 (2024), 474–477
-
Surface morphology of AlN layers grown on a nano-structured SiN$_x$/Si(100) template
Fizika i Tekhnika Poluprovodnikov, 58:1 (2024), 3–6
-
Characterization of boron-doped single-crystal diamond by electrophysical methods (review)
Zhurnal Tekhnicheskoi Fiziki, 93:1 (2023), 5–28
-
Morphology of the surface of semipolar GaN layers during epitaxy on a nano-patterned Si substrate
Zhurnal Tekhnicheskoi Fiziki, 92:5 (2022), 720–723
-
Properties of semipolar GaN grown on a Si(100) substrate
Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 1006–1009
© , 2026