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Publications in Math-Net.Ru
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Structure and properties of gallium-oxide films produced by high-frequency magnetron-assisted deposition
Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 411–417
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Photoelectric characteristics of metal – Ga$_2$O$_3$–GaAs structures
Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 357–363
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Effect of thermal annealing and exposure to oxygen plasma on the properties of TiO$_2$–Si structures
Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 989–994
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Properties of TiO$_2$ films on silicon substrate
Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 759–762
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Effect of annealing in argon on the properties of thermally deposited gallium-oxide films
Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1137–1143
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Gallium-oxide films obtained by thermal evaporation
Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 598–603
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Electrical characteristics of $n$-GaAs-anode film-Ga$_2$O$_3$-metal structures
Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1027–1031
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The effect of annealing on the properties of Ga$_2$O$_3$ anodic films
Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 278–284
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Ga$_2$O$_3$ films formed by electrochemical oxidation
Fizika i Tekhnika Poluprovodnikov, 45:8 (2011), 1130–1135
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Effect of oxygen plasma on the properties of tantalum oxide films
Fizika i Tekhnika Poluprovodnikov, 44:9 (2010), 1266–1273
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