Orletskii Ivan Grigor'evich

Publications in Math-Net.Ru

1. Electrical and optical properties of Cu$_{2}$Zn(Fe,Mn)SnS$_{4}$ films prepared by spray pyrolysis
   
   Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  251–257
2. Electrical properties and energy parameters of $n$-FeS$_{2}$/$p$-Cd$_{1-x}$Zn$_{x}$Te heterojunctions
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1049–1055
3. Structural and optical properties of Cu$_{2}$ZnSn(S,Se)$_{4}$ films obtained by magnetron sputtering of a Cu$_{2}$ZnSn alloy target
   
   Fizika Tverdogo Tela, 59:8 (2017),  1619–1623
4. Structural, optical, and electrical properties of Cu$_{2}$SnS$_{3}$ thin films produced by sol gel method
   
   Fizika Tverdogo Tela, 59:4 (2017),  783–789
5. Silicon nanowire array architecture for heterojunction electronics
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  569
6. Optical properties and mechanisms of current flow in Cu$_{2}$ZnSnS$_{4}$ films prepared by spray pyrolysis
   
   Fizika Tverdogo Tela, 58:5 (2016),  1024–1029
7. Low-temperature spray-pyrolysis of FeS$_2$ films and their electrical and optical properties
   
   Fizika Tverdogo Tela, 58:1 (2016),  39–43
8. Electrical and photoelectric properties of the TiN/$p$-InSe heterojunction
   
   Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  339–343
9. Peculiarities in electrical and optical properties of Cu$_{2}$Zn$_{1-x}$Mn$_{x}$SnS$_{4}$ films obtained by spray pyrolysis
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016),  27–34
10. Electrical properties of thin-film semiconductor heterojunctions $n$-TiO$_2$/$p$-CuInS$_2$
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1075–1079
11. Electrical properties of MOS diodes In/TiO$_2$/$p$-CdTe
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  504–508
12. Electrical and photoelectric properties of $n$-CdO–$p$-InSe anisotype heterojunctions
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  935–938
13. UV detector with internal gain based on SnO$_2$–ZnSe heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:8 (2011),  21–25