Remennyi Maksim Anatol'evich

Publications in Math-Net.Ru

1. Радиационная стойкость датчиков МНПВО на основе двойных гетероструктур $p$-InAsSbP/$n$-InAs, облученных гамма-квантами
   
   Zhurnal Tekhnicheskoi Fiziki, 96:1 (2026),  112–121
2. Инфракрасный сенсор углекислого газа на основе свето- и фотодиодов из твердых растворов InAsSb(P)
   
   Optics and Spectroscopy, 133:11 (2025),  1168–1171
3. High operating temperature photodiodes based on $n$-InAsSbP/InAs/$p$-InAsSbP heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 59:6 (2025),  332–336
4. Longwave ($\lambda_{0.1}$ = 10 $\mu$m, 296 K) infrared photodetectors based on InAsSb$_{0.38}$ solid solution
   
   Optics and Spectroscopy, 131:11 (2023),  1505–1508
5. On heating mechanisms in LEDs based on $p$-InAsSbP/$n$-InAs(Sb)
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  42–52
6. On-chip ATR sensor ($\lambda$ = 3.4 $\mu$m) based on InAsSbP/InAs double heterostructure for the determination of ethanol concentration in aqueous solutions
   
   Optics and Spectroscopy, 130:8 (2022),  1223–1228
7. On the use of indium arsenide as the waveguide material in the measurements by attenuated total reflectance
   
   Optics and Spectroscopy, 129:9 (2021),  1193–1197
8. Indium arsenide-based spontaneous emission sources (review: a decade later)
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  147–157
9. InAsSb diode optical pairs for real-time carbon dioxide sensors
   
   Zhurnal Tekhnicheskoi Fiziki, 88:9 (2018),  1433–1438
10. InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths
    
    Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  234–237
11. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  269–275
12. Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  657–662
13. Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes
    
    Zhurnal Tekhnicheskoi Fiziki, 84:11 (2014),  52–57
14. $P$-InAsSbP/$n^0$-InAs/$n^+$-InAs photodiodes for operation at moderate cooling (150–220 K)
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1394–1397
15. Cooled photodiodes based on a type-II single $p$-InAsSbP/$n$-InAs heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  45–52
16. Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  708–713
17. Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 5.2 $\mu$m)
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  258–261
18. Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at $\lambda$ = 5.8 $\mu$m
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:5 (2012),  85–90
19. Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  554–559