Demidov Evgenii Valentinovich

Publications in Math-Net.Ru

1. CVD diamond structures with a $p$–$n$ junction – diodes and transistors
   
   Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025),  540–548
2. Modeling of transport and emission characteristics of light-emitting lateral silicon $p^+$–$i$–$n^+$ transistor with self-assembled Ge(Si) nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  242–249
3. Study of photo and electroluminescence of nitrogen-related color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  48–51
4. Electroluminescence of germanium-vacancy color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:8 (2025),  3–6
5. Theoretical and experimental studies of micromagnets for a silicon quantum processor
   
   Zhurnal Tekhnicheskoi Fiziki, 94:7 (2024),  1071–1078
6. Isotopically purified Si/SiGe epitaxial structures for quantum computing
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:10 (2024),  22–25
7. Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers
   
   Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1923–1932
8. Ohmic contacts to CVD diamond with boron-doped $\delta$ layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1386–1390
9. Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
   
   Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1594–1598
10. Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1151
11. Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1595–1598
12. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1459–1462
13. Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface $\delta$-doping
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1481–1485