Belyakova Elena Ivanovna

Publications in Math-Net.Ru

1. The influence of external parameters on the switching process by delayed ionization in a silicon $p^+$–$n$–$n^+$-structure
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  326–332
2. Numerical and experimental study of an optimized $p$-SOS diode
   
   Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019),  409–415
3. Powerful diode nanosecond current opening switch made of $p$-silicon ($p$-SOS)
   
   Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  106–109
4. The formation of shallow-donor distribution profiles in proton irradiation of silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:23 (2014),  67–73
5. Emission intensity in the visible and IR spectral ranges from Si-based structures formed by direct bonding with simultaneous doping with erbium (Er) and europium (Eu)
   
   Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1204–1209
6. Reverse recovery of Si/Si$_{1-x}$Ge$_x$ heterodiodes fabricated by direct bonding
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011),  83–89
7. Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding
   
   Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1135–1139