Lyublinsky Aleksandr Gotfridovich

Publications in Math-Net.Ru

1. Installation for testing avalanche breakdown of field effect transistors operating on an inductive load
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  274–280
2. The influence of external parameters on the switching process by delayed ionization in a silicon $p^+$–$n$–$n^+$-structure
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  326–332
3. The ratio of active and reactive losses in drift step recovery diodes depending on their operating mode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:24 (2023),  6–10
4. Numerical and experimental study of an optimized $p$-SOS diode
   
   Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019),  409–415
5. The numerical simulation of the nanosecond switching of a $p$-SOS diode
   
   Zhurnal Tekhnicheskoi Fiziki, 87:12 (2017),  1790–1793
6. Analysis of integrated thyristor switching-off by a reverse gate pulse current
   
   Zhurnal Tekhnicheskoi Fiziki, 87:11 (2017),  1682–1686
7. High-power subnanosecond silicon avalanche shaper
   
   Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017),  793–796
8. Analysis of the process of turning off an integrated thyristor with external MOSFET control
   
   Zhurnal Tekhnicheskoi Fiziki, 87:1 (2017),  155–158
9. Powerful diode nanosecond current opening switch made of $p$-silicon ($p$-SOS)
   
   Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  106–109
10. Analysis of nanosecond breaking of a high-density current in SOS diodes
    
    Zhurnal Tekhnicheskoi Fiziki, 85:11 (2015),  104–108