Illarionov Yurii Yur'evich

Publications in Math-Net.Ru

1. Reproducibility of the electrophysical characteristics of the prototype transistor structures based on the graphene–CaF$_2$–Si(111) heterosystem
   
   Fizika i Tekhnika Poluprovodnikov, 58:5 (2024),  272–277
2. Field-effect transistor with graphene channel and epitaxial calcium fluoride layer as a gate dielectric
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:4 (2024),  27–30
3. Calcium fluoride films with 2–10 nm thickness on Silicon-(111): growth, diagnostics, study of the through current transport
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  888–892
4. Trends in reverse-current change in tunnel MIS diodes with calcium fluoride on Si(111) upon the formation of an extra oxide layer
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  844–849
5. Nonmonotonic change in the tunnel conductivity of an MIS structure with a two-layer insulator with an increase in its thickness (by the example of the metal/SiO$_{2}$/CaF$_{2}$/Si system)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  150–157
6. Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  467–471
7. Resonant electron tunneling and related charging phenomena in metal–oxide–$p^+$-Si nanostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  62–69
8. Adaptation of the model of tunneling in a metal/CaF$_2$/Si(111) system for use in industrial simulators of MIS devices
   
   Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  266–270
9. A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
   
   Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  675–683
10. Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:19 (2013),  76–85
11. Characteristics of thin calcium fluoride barrier layers for field-effect transistors and functional electronic devices
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  26–33