Zubkov Vasilii Ivanovich

Publications in Math-Net.Ru

1. Studies of structural and electronic properties of InP layers formed by plasma-enhanced atomic layer deposition on a Si substrate with a GaP sublayer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  18–22
2. Characterization of boron-doped single-crystal diamond by electrophysical methods (review)
   
   Zhurnal Tekhnicheskoi Fiziki, 93:1 (2023),  5–28
3. Study of InP/GaP quantum wells grown by vapor phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023),  16–20
4. Determination of thickness and doping features of multilayer $4H$–$\mathrm{SiC}$ structures by frequency analysis of IR reflection spectra
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022),  34–36
5. Technique for the electrochemical capacitance–voltage profiling of heavily doped structures with a sharp doping profile
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  281–286
6. Through concentration profiling of heterojunction solar cells
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:17 (2019),  39–42
7. Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  873–880
8. Self-consistent simulation of GaAs/InGaAs/AlGaAs heterostructures photoluminescence spectra and its application to pHEMT structures diagnostics
   
   Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  479
9. Experimental detection of resonant tunneling in the doped structure with a single quantum well by the admittance spectroscopy method
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  112–119
10. Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence
    
    Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017),  1539–1544
11. Investigation of ion-implanted photosensitive silicon structures by electrochemical capacitance–voltage profiling
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  324–330
12. Analysis of the electrostatic interaction of charges in multiple InGaAs/GaAs quantum wells by admittance-spectroscopy methods
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  944–950
13. Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  352–357