Deryabin Alexandr Sergeyevich

Publications in Math-Net.Ru

1. Study of Si(100) surface step convergence kinetics
   
   Fizika Tverdogo Tela, 65:2 (2023),  173–179
2. Synthesis of epitaxial structures with two-dimensional si layers embedded in a CaF$_2$ dielectric matrix
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022),  608–613
3. Structural and optical properties of two-dimensional Si and Ge layers formed by molecular beam epitaxy on CaF$_2$/Si(111) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  748–752
4. Forming dislocation pairs in the Ge/GeSi/Si(001) heterostructure
   
   Fizika Tverdogo Tela, 61:2 (2019),  284–287
5. Formation of a stepped Si(100) surface and its effect on the growth of Ge islands
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  409–413
6. The reliability of revealing threading dislocations in epitaxial films by structure-sensitive etching
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018),  30–36
7. Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness
   
   Fizika Tverdogo Tela, 57:4 (2015),  746–752
8. Specific features of plastic relaxation of a metastable Ge$_x$Si$_{1-x}$ layer buried between a silicon substrate and a relaxed germanium layer
   
   Fizika Tverdogo Tela, 56:2 (2014),  247–253
9. Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface
   
   Fizika Tverdogo Tela, 53:10 (2011),  1903–1909
10. Edge misfit dislocations in Ge$_x$Si$_{1-x}$/Si(001) ($x\sim$ 1) heterostructures: role of buffer Ge$_y$Si$_{1-y}$ $(y<x)$ interlayer in their formation
    
    Fizika Tverdogo Tela, 53:9 (2011),  1699–1705
11. Heteroepitaxy of Ge$_x$Si$_{1-x}$ ($x\sim$ 0.4–0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction
    
    Fizika Tverdogo Tela, 52:1 (2010),  32–36