Alekseev Prokhor Anatol'evich

Publications in Math-Net.Ru

1. Investigation of the doping level of semiconductor nanowires via Raman spectroscopy
   
   Fizika Tverdogo Tela, 67:3 (2025),  460–463
2. Triboelectric current generation by friction of conductive probe and GaAs surface
   
   Fizika Tverdogo Tela, 65:12 (2023),  2144–2147
3. Triboelectric generation by friction of heavily doped diamond probes on a $p$-Si surface
   
   Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  725–730
4. Finding the wedge-shaped Au nanoclusters at the surface of GaAs and investigating them with the polarization spectroscopy of plasmons
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  484–490
5. Elastic deformations distribution in laterally bent conical nanowires
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  634–636
6. Effect of chemical passivation of GaAs(001) surface on anisotropy and orientation of gold nanoclusters formed on it and their plasmons
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  613–617
7. Nonlinear bleaching of InAs nanowires in the visible range
   
   Optics and Spectroscopy, 128:1 (2020),  128–133
8. Terahertz near-field response in graphene ribbons
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  29–32
9. Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  832–838
10. Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1507–1511
11. MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1317–1320
12. GaAs wurtzite nanowires for hybrid piezoelectric solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  511
13. Local anodic oxidation of graphene layers on SiC
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:9 (2018),  34–40
14. Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1116–1124
15. Formation of stable charge regions in an array of germanium nanocrystallites inside SiO$_2$ using electrostatic force microscopy
    
    Zhurnal Tekhnicheskoi Fiziki, 85:5 (2015),  50–56
16. Mapping of laser diode radiation intensity by atomic-force microscopy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:18 (2015),  8–15
17. Behavior of charges locally injected into nanothin high-k SmScO$_3$ dielectric
    
    Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  122–126
18. Two-color luminescence from a single type-II InAsSbP/InAs heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  30–35
19. Behavior of locally injected charges in high-k nanolayers of LaScO$_3$ insulator on a Si substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:9 (2013),  47–55
20. Measurement of Young’s modulus of GaAs nanowires growing obliquely on a substrate
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  659–664
21. Room-temperature photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for extended (1.5–4.8 $\mu$m) spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:19 (2011),  95–103
22. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  817–821