Erofeev Evgenii Viktorovich

Publications in Math-Net.Ru

1. Research of design and technological features of manufacturing of low-noise GaAs transistors with T-gate length of 150 nm for information transmission systems
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  149–155
2. Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  249–252
3. Increasing saturated electron-drift velocity in donor–acceptor doped phemt heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018),  77–84
4. High-voltage MIS-gated GaN transistors
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1278–1281
5. Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  253–257
6. Formation of the low-resistivity compound Cu$_{3}$Ge by low-temperature treatment in an atomic hydrogen flux
   
   Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1258–1262
7. Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated $n$-GaAs surface
   
   Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1191–1196
8. Study of the influence of the sulfide and ultraviolet treatment of the $n$–$i$-GaAs surface on the parameters of ohmic contacts
   
   Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1056–1061