Smirnova Irina Anatol'evna

Publications in Math-Net.Ru

1. The influence of external parameters on the switching process by delayed ionization in a silicon $p^+$–$n$–$n^+$-structure
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  326–332
2. Experimental observation of delayed impact-ionization avalanche breakdown in semiconductor structures without $p$–$n$ junctions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  66–73
3. Analysis of nanosecond breaking of a high-density current in SOS diodes
   
   Zhurnal Tekhnicheskoi Fiziki, 85:11 (2015),  104–108
4. Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:7 (2015),  1–7
5. Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded $p$–$n$ junctions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:8 (2014),  80–87
6. Porous silicon based negative electrodes for lithium ion batteries
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:15 (2011),  87–94