Tolbanov Oleg Petrovich

Publications in Math-Net.Ru

1. Selective sensors of nitrogen dioxide based on thin tungsten oxide films under optical irradiation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  7–10
2. Conductivity of Ga$_{2}$O$_{3}$–GaAs heterojunctions
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  154–160
3. Charge carrier transport and deep levels recharge in avalanche $S$-diodes based on GaAs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018),  21–29
4. Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO$_{2}$–Si structures
   
   Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1178–1184
5. Conduction in titanium dioxide films and metal–TiO$_{2}$–Si structures
   
   Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1036–1040
6. Deep centers in TiO$_2$-Si structures
   
   Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1036–1042
7. Effect of thermal annealing and exposure to oxygen plasma on the properties of TiO$_2$–Si structures
   
   Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  989–994
8. Properties of TiO$_2$ films on silicon substrate
   
   Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  759–762
9. Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1391–1395
10. Effect of annealing in argon on the properties of thermally deposited gallium-oxide films
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1137–1143
11. Gallium-oxide films obtained by thermal evaporation
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  598–603
12. Electrical characteristics of $n$-GaAs-anode film-Ga$_2$O$_3$-metal structures
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1027–1031
13. The effect of annealing on the properties of Ga$_2$O$_3$ anodic films
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  278–284
14. Ga$_2$O$_3$ films formed by electrochemical oxidation
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1130–1135
15. Effect of oxygen plasma on the properties of tantalum oxide films
    
    Fizika i Tekhnika Poluprovodnikov, 44:9 (2010),  1266–1273
16. A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1009–1011
17. Mechanism of high-speed switching in gallium-arsenide structures with deep centers
    
    Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  386–390