Yakovlev Georgii Evgen'evich

Publications in Math-Net.Ru

1. Studies of structural and electronic properties of InP layers formed by plasma-enhanced atomic layer deposition on a Si substrate with a GaP sublayer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  18–22
2. Study of InP/GaP quantum wells grown by vapor phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023),  16–20
3. Technique for the electrochemical capacitance–voltage profiling of heavily doped structures with a sharp doping profile
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  281–286
4. Through concentration profiling of heterojunction solar cells
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:17 (2019),  39–42
5. Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  873–880
6. Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence
   
   Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017),  1539–1544
7. Investigation of ion-implanted photosensitive silicon structures by electrochemical capacitance–voltage profiling
   
   Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  324–330