Milakhin Denis Sergeevich

Publications in Math-Net.Ru

1. Chemical kinetics of the Si(111) surface nitridation process at temperatures below the structural phase transition (7$\times$7)$\to$(1$\times$1)
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  349–357
2. Determination of the AlN nucleation layer thickness formed on the Al$_2$O$_3$ (0001) surface during nitridation process by XPS and IR spectroscopy
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  734–741
3. Forming the GaN nanocrystals on the graphene-like $g$-AlN and $g$-Si$_{3}$N$_{3}$ surface
   
   Fizika Tverdogo Tela, 61:12 (2019),  2327–2332
4. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
5. Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  643–650
6. Nitridation of an unreconstructed and reconstructed $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ (0001) sapphire surface in an ammonia flow
   
   Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  925–931