Parshin Evgenii Orestovich

Publications in Math-Net.Ru

1. Dislocation-related photoluminescence in silicon implanted with germanium ions
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  165–168
2. Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  161–164
3. Study of multilayer thin film structures by Rutherford backscattering spectrometry
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:12 (2019),  26–29
4. Photoluminescence in silicon implanted with erbium ions at an elevated temperature
   
   Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1038–1040