|
|
Publications in Math-Net.Ru
-
A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 28–30
-
Spectra of optical absorption and energy levels diagram of Er$^{3+}$ ions in bulk crystals of aluminum nitride
Fizika Tverdogo Tela, 59:12 (2017), 2387–2391
-
Absorption spectra of bulk aluminum nitride crystals doped with Er$^{3+}$ ions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016), 91–96
-
Dynamics of carrier recombination in a semiconductor laser structure
Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1578–1582
-
The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga–HCl–NH$_3$–H$_2$–Ar system
Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:10 (2015), 29–34
-
Influence of the magnetic field strength and excitation intensity on the shape of microphotoluminescence spectra of quantum-well structures based on GaN/InGaN doped with Sm and Eu+Sm
Fizika Tverdogo Tela, 55:5 (2013), 962–967
-
Absorption spectra of Er$^{3+}$ ions in Li$_6$Y(BO$_3$)$_3$ crystals
Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:9 (2013), 41–46
-
GaAs $p$–$i$–$n$ structures for X-ray detectors grown on Ge and GaAs substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012), 1–7
-
Epitaxy of gallium nitride in semi-polar direction on silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012), 21–26
-
Circular polarization of photoluminescence of GaAs/AlGaAs quantum wells as a function of their growth conditions
Fizika Tverdogo Tela, 53:2 (2011), 371–376
-
Setup for taking the radiation spectra of wideband semiconductors
Zhurnal Tekhnicheskoi Fiziki, 81:9 (2011), 77–81
-
Photoluminescence of nitro-substituted europium (III) phthalocyanines
Fizika i Tekhnika Poluprovodnikov, 44:8 (2010), 1104–1107
-
The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals
Fizika i Tekhnika Poluprovodnikov, 44:4 (2010), 445–451
© , 2026