Seredova Natal'ya Vladimirovna

Publications in Math-Net.Ru

1. Anisotropic stresses in $\mathrm{GaN}(11\bar20)$ layers on an $r$-$\mathrm{Al}_2\mathrm{O}_3$ substrate during hydride vapor phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  266–270
2. Properties of semipolar GaN grown on a Si(100) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1006–1009
3. A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  28–30
4. Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers
   
   Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1088–1090
5. Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped $p$-4H-SiC (CVD)
   
   Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1198–1201
6. On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in $p$-4H-SiC
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  61–67
7. Conductivity compensation in $n$-4H-SiC (CVD) under irradiation with 0.9-MeV electrons
   
   Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1033–1036
8. Use of sublimation epitaxy for obtaining volume 3C-SiC crystals
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:12 (2010),  71–77