Tregulov Vadim Viktorovich

Publications in Math-Net.Ru

1. Optical properties of porous silicon irradiated with a nanosecond ytterbium laser
   
   Zhurnal Tekhnicheskoi Fiziki, 95:6 (2025),  1208–1215
2. Influence of nanosecond ytterbium laser irradiation modes on the morphology of porous silicon films
   
   Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024),  817–822
3. Current transfer in a semiconductor structure with a porous silicon film formed by metal-stimulated etching
   
   Fizika i Tekhnika Poluprovodnikov, 56:4 (2022),  420–425
4. Current transmission mechanisms in the semiconductor structure of a photoelectric transducer with an $n^{+}$–$p$ junction and an antireflection porous silicon film formed by color etching
   
   Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019),  737–743
5. Deep-level defects in a photovoltaic converter with an antireflection porous silicon film formed by chemical stain etching
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  24–27
6. Features of the frequency dependence of capacitance–voltage characteristics of a semiconductor structure of a photoelectric converter based on a $p$–$n$ junction with an antireflective film of porous silicon
   
   Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018),  1863–1867
7. Study of current flow mechanisms in a CdS/$por$-Si/$p$-Si heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  751–756
8. Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017),  3–9
9. Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an $n^{+}$–$p$-junction and an antireflective porous silicon film
   
   Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016),  91–94
10. An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016),  16–22
11. Peculiarities of the capacitance-voltage characteristic of a photoelectric solar energy convertor based on a silicon $p$–$n$ junction with a porous silicon antireflection coating
    
    Zhurnal Tekhnicheskoi Fiziki, 84:9 (2014),  153–154
12. A method for determining the density of surface states in CdA/Si(p) heterostructures based on the analysis of volt-farad characteristics
    
    University proceedings. Volga region. Physical and mathematical sciences, 2012, no. 3,  124–132
13. Study of surface states in photoelectric solar energy converters based on a CdS/Si(p) heterostructure
    
    University proceedings. Volga region. Physical and mathematical sciences, 2011, no. 3,  140–150