Lazarenko Petr Ivanovich

Publications in Math-Net.Ru

1. New metal-free dye with an acceptor-anchor group of thieno[3,2-b]thiophene family for dye-sensitized solar cells
   
   Mendeleev Commun., 36:1 (2026),  72–75
2. Development of technology for creating photonic ics with ring microresonators based on Si/SiO$_2$/Si$_3$N$_4$
   
   Optics and Spectroscopy, 133:9 (2025),  957–962
3. Chalcogenide vitreous semiconductors in memory and information processing devices
   
   Fizika i Tekhnika Poluprovodnikov, 59:9 (2025),  511–539
4. Integrated sub-terahertz waveguide reconfigurable attenuator based on Ge$_2$Sb$_2$Te$_5$ phase-change material
   
   Fizika i Tekhnika Poluprovodnikov, 59:2 (2025),  84–90
5. Flexoelectric effect in GeTe
   
   Fizika Tverdogo Tela, 66:12 (2024),  2311–2316
6. Analysis of femtosecond modification of thin $a$-Ge$_2$Sb$_2$Te$_5$ films by XZ-scan
   
   Optics and Spectroscopy, 132:1 (2024),  27–33
7. Formation of periodic two-phase structures on the surface of amorphous Ge$_2$Sb$_2$Te$_5$ films under the action of ultrashort laser pulses of different durations and repetition rates
   
   Optics and Spectroscopy, 131:2 (2023),  196–201
8. Kinetics of reversible phase transitions in Ge$_2$Sb$_2$Te$_5$ thin films at femtosecond laser irradiation
   
   Optics and Spectroscopy, 131:2 (2023),  145–153
9. New thieno[3,2-b]indole conjugates with 5-(methylene)rhodanine-3-acetic acid in dye-sensitized solar cells
   
   Mendeleev Commun., 32:4 (2022),  523–526
10. Phase change memory materials and their applications
    
    Usp. Khim., 91:9 (2022),  1–39
11. Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb$_{2}$Te$_{3}$ chalcogenide semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  154–160