Loshkarev Ivan Dmitrievich

Publications in Math-Net.Ru

1. Effect of Ge nanolayers and quantum dots on photoluminescence properties of GeSiSn/Si heterostructures
   
   Fizika Tverdogo Tela, 67:9 (2025),  1642–1646
2. Photoelectric properties of structures with GeSiSn|Ge multiple quantum wells and relaxed GeSiSn layers
   
   Fizika Tverdogo Tela, 66:11 (2024),  1871–1878
3. InAs/GaSb superlattices for infrared photodetectors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024),  33–36
4. InSb/GaAs heterostructures for magnetic field sensors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  27–30
5. Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  980–992
6. Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1289–1295
7. The growth of InAs$_{x}$Sb$_{1-x}$ solid solutions on miscuted GaAs(001) substrates by molecular-beam epitaxy method
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  512–519
8. Formation of a stepped Si(100) surface and its effect on the growth of Ge islands
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  409–413
9. X-ray diffraction analysis of epitaxial layers with the properties of a dislocation filter
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  19–27
10. The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:4 (2017),  64–71
11. Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates
    
    Fizika Tverdogo Tela, 57:11 (2015),  2095–2101