Klimov Evgenii Aleksandrovich

Publications in Math-Net.Ru

1. Influence of tellurium and zinc stoichiometry on the ellipsometric spectra of ZnTe/GaAs (100)
   
   Optics and Spectroscopy, 133:3 (2025),  274–280
2. THz emission from (100)- and (111)A-oriented multiple pseudomorphic quantum wells $\{\mathrm{InGaAs/InAlAs}\}$
   
   Optics and Spectroscopy, 133:3 (2025),  221–231
3. Temperature influence on the crystal structure of CdTe(111) films grown by molecular-beam epitaxy on GaAs(100) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  141–149
4. Generation of THz radiation by (100), (110), and (111)A-oriented multiple pseudomorphic InGaAs/GaAs quantum wells and photoconductive antennas
   
   Kvantovaya Elektronika, 54:1 (2024),  43–50
5. Thz radiation of photoconductive antennas based on $\{$LT-GaAs/GaAs:Si$\}$ superlattice structures
   
   Optics and Spectroscopy, 128:7 (2020),  1004–1011
6. Study of the surface morphology, electrophysical characteristics, and photoluminescence spectra of GaAs epitaxial films on GaAs (110) substrates
   
   Optics and Spectroscopy, 128:7 (2020),  877–884
7. Silicon-doped epitaxial films grown on GaAs(110) substrates: the surface morphology, electrical characteristics, and photoluminescence spectra
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1203–1210
8. Electrical and photoluminescence studies of $\{\mathrm{LT}-\mathrm{GaAs/GaAs} : \mathrm{Si}\}$ superlattices grown by MBE on (100)- and (111)A-oriented GaAs substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  258–266
9. Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)- and (111)A-oriented GaAs substrates at lowered temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  395–401
10. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  792–797
11. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  529–534
12. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  322–330
13. Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  195–203
14. Photoluminescence properties of modulation-doped In$_x$Al$_{1-x}$As/In$_y$Ga$_{1-y}$As/In$_x$Al$_{1-x}$As structures with strained inas and gaas nanoinserts in the quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1243–1253
15. Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In$_{0.70}$Al$_{0.30}$As/In$_{0.76}$Ga$_{0.24}$As/In$_{0.70}$Al$_{0.30}$As structures on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  942–950
16. Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  932–935
17. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  241–248
18. Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In$_x$Ga$_{1-x}$As quantum well with InAs inserts
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  204–213
19. Application of photoluminescence spectroscopy to studies of In$_{0.38}$Al$_{0.62}$As/In$_{0.38}$Ga$_{0.62}$As/In$_{0.38}$Al$_{0.62}$As metamorphic nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  909–916
20. Photoluminescence studies of In$_{0.7}$Al$_{0.3}$As/In$_{0.75}$Ga$_{0.25}$As/In$_{0.7}$Al$_{0.3}$As metamorphic heterostructures on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  658–666
21. Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic In$_{0.7}$Al$_{0.3}$As/In$_{0.75}$Ga$_{0.25}$As/In$_{0.7}$Al$_{0.3}$As HEMT nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  67–72
22. Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1215–1220
23. Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  990–996
24. Persistent photoconductivity and electron mobility in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As/InP quantum-well structures
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  927–934
25. Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAlAs/InGaAs MHEMT heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  510–515
26. Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  348–352
27. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  500–506
28. Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1373–1378
29. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1214–1218
30. Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and electrical properties
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1203–1208
31. Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  666–671
32. Electron transport in an In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum well with a $\delta$-Si doped barrier in high electric fields
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  928–933