Matyushenko Evgenii Vadimovich

Publications in Math-Net.Ru

1. MIS transistor based on PbSnTe : In film with an Al$_2$O$_3$ gate dielectric
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  243–249
2. Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1122–1128