Goryachev Dmitrii Nikolaevich

Publications in Math-Net.Ru

1. Electrical and photoelectric properties of $\alpha$-Si/SiO$_{2}$ and $\alpha$-Ge/SiO$_{2}$ multilayer nanostructures on $p$-Si substrates annealed at various temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1112–1116
2. Transport and photosensitivity in structures: a composite layer of silicon and gold nanoparticles on $p$-Si
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1071–1075
3. Dynamics of changes in the photoluminescence of porous silicon after gamma irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  921–925
4. Effect of gamma irradiation on the photoluminescence of porous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  507–511
5. Surface plasmon polaritons in a composite system of porous silicon and gold
   
   Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  453–458
6. Free-standing luminescent layers of porous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1636–1639
7. Optical properties of iron-passivated nanoporous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  669–673
8. Air-hydrogen fuel cell with two-level slotted silicon-based electrode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:10 (2010),  1–8
9. RESONANCE EFFECTS CAUSED BY SEW UNDER ALMOST NORMAL INCIDENCE OF LIGHT-BEAM ON SINUSOIDAL SURFACE
   
   Zhurnal Tekhnicheskoi Fiziki, 61:6 (1991),  100–105
10. NARROW-BAND SELECTIVE PHOTODETECTORS BASED ON THE SCHOTTKY STRUCTURE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:6 (1990),  72–75
11. Влияние тонкого диэлектрического слоя на свойства ПЭВ на границе металл$-$полупроводник
    
    Fizika i Tekhnika Poluprovodnikov, 23:11 (1989),  1966–1970
12. Резонансные явления в структурах Шоттки при возбуждении «медленных» поверхностных электромагнитных волн
    
    Fizika i Tekhnika Poluprovodnikov, 23:3 (1989),  461–465
13. Поляризационная фоточувствительность барьеров электролит$-$CdGeP$_{2}$
    
    Fizika i Tekhnika Poluprovodnikov, 23:2 (1989),  312–315
14. Влияние распределения поля поверхностного поляритона в системе диэлектрик–металл–полупроводник на фотоответ полупроводника
    
    Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  906–910
15. RESONANCE ELECTROLUMINESCENCE STRUCTURE OF METAL-SUPERCONDUCTOR WITH THE CORRUGATE SURFACE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988),  757–760
16. Resonance quenching the mirror reflection under the excitation of surface electromagnetic-waves on nonmetallic periodic structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987),  693–697
17. Photoresponse of the metal–semiconductor structure under the excitation of surface-polaritons by the TE-polarization light
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:5 (1987),  261–265
18. Anomalous Photoeffect on the Cuprous Oxide – Electrolyte Interface
    
    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  876–880
19. Influence of optical-constants of semiconductors on the location of a polariton peak of the Schottky diode photoresponse
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1145–1149
20. INVESTIGATION OF GAAS FUSION PECULIARITIES UNDER 2-LONG-WAVE LASER ANNEALING
    
    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2144–2148
21. Photoresponse of the semiconductor-metal structure related to excitation of surface-polaritons
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1162–1165
22. Photoelectrochemical Study of Optical Transitions in Semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  752–755
23. Запись голограмм на металле методом фотохимического травления
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:8 (1983),  471–474