Litvinov Vladimir Georgievich

Publications in Math-Net.Ru

1. Current transfer in a semiconductor structure with a porous silicon film formed by metal-stimulated etching
   
   Fizika i Tekhnika Poluprovodnikov, 56:4 (2022),  420–425
2. External quantum efficiency of bifacial HIT solar cells
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1066–1071
3. Current transmission mechanisms in the semiconductor structure of a photoelectric transducer with an $n^{+}$–$p$ junction and an antireflection porous silicon film formed by color etching
   
   Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019),  737–743
4. Deep-level defects in a photovoltaic converter with an antireflection porous silicon film formed by chemical stain etching
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  24–27
5. Study of deep levels in a HIT solar cell
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  787–791
6. Study of current flow mechanisms in a CdS/$por$-Si/$p$-Si heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  751–756
7. Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017),  3–9
8. Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an $n^{+}$–$p$-junction and an antireflective porous silicon film
   
   Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016),  91–94
9. An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016),  16–22
10. Low-resistance and high-resistance states in strontium titanate films formed by the sol–gel method
    
    Fizika Tverdogo Tela, 57:10 (2015),  1977–1980
11. Analysis of the electrostatic interaction of charges in multiple InGaAs/GaAs quantum wells by admittance-spectroscopy methods
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  944–950