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Publications in Math-Net.Ru
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MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current
Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 495–500
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Fabrication and study of the properties of GaAs layers doped with bismuth
Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 399–405
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Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy
Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 801–806
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On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures
Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1233–1236
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Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing
Fizika Tverdogo Tela, 59:11 (2017), 2130–2134
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Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1510–1513
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Study of the structures of cleaved cross sections by Raman spectroscopy
Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1561–1564
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Raman spectroscopy of InGaAs/GaAs nanoheterostructures $\delta$-doped with Mn
Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 102–106
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Photoelectron effects in GaAs layers with quantum heteropit built-in on the surface
Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 1886–1893
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Photoelectric method for optical-absorption coefficient determination and its application to semi-insulating GaAs
Fizika i Tekhnika Poluprovodnikov, 26:7 (1992), 1313–1320
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