Publications in Math-Net.Ru
-
Implantation of silicon ions into sapphire: low doses
Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 766–770
-
On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures
Fizika i Tekhnika Poluprovodnikov, 49:8 (2015), 1124–1128
-
Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies
Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 264–266
-
Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface
Fizika i Tekhnika Poluprovodnikov, 44:10 (2010), 1433–1435
-
Высокотемпературная ионная имплантация мышьяка в кремний
Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 1132–1133
-
Исследование распределения аморфной и кристаллической фазы
ионно-синтезированного SiC в Si
Fizika i Tekhnika Poluprovodnikov, 22:4 (1988), 731–732
© , 2026