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Shapoval Sergei Yur'evich
Publications in Math-Net.Ru
Модификация параметров AlGaN/GaN-транзисторных структур пассивацией и обработкой в водородной плазме
Zhurnal Tekhnicheskoi Fiziki
,
96
:2 (2026),
336–344
Radiation hardness of bipolar transistor based integrated circuits improved by ECR hydrogen plasma treatment and Si-wafers gettering
Fizika i Tekhnika Poluprovodnikov
,
57
:3 (2023),
195–201
Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction
Fizika i Tekhnika Poluprovodnikov
,
54
:8 (2020),
748–752
Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate
Pisma v Zhurnal Tekhnicheskoi Fiziki
,
36
:8 (2010),
39–47
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Steklov Math. Inst. of RAS
, 2026