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Kovalchuk Anatolii Viktorovich

Publications in Math-Net.Ru

  1. Модификация параметров AlGaN/GaN-транзисторных структур пассивацией и обработкой в водородной плазме

    Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  336–344
  2. Radiation hardness of bipolar transistor based integrated circuits improved by ECR hydrogen plasma treatment and Si-wafers gettering

    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  195–201
  3. Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  748–752


© Steklov Math. Inst. of RAS, 2026