Rozhkov Alexandr Vladimirovich

Publications in Math-Net.Ru

1. Direct current modulation of high-power semiconductor lasers by high-frequency limit-cycle in gallium arsenide avalanche diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:1 (2026),  36–40
2. Self-excitation of microwave-range auto-oscillations in avalanche gaas diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024),  44–47
3. Subnanosecond kinetics of recombination radiation of a high-voltage gallium arsenide diode in impact-ionization switching
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  11–14
4. Collapsing Gunn domains as a mechanism of self-supporting conducting state in reversely biased high-voltage GaAs diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:20 (2022),  31–34
5. The effect of maintaining a high conductivity state in high-voltage GaAs diodes switched-on in the delayed avalanche breakdown mode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:16 (2022),  25–29
6. On the current dependence of the injection efficiency and the relative contribution of the escape rate and internal optical loss to saturation of the power–current characteristics of high-power pulsed lasers ($\lambda$ = 1.06 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  721–728
7. Numerical simulation of the current dependence of emission spectra of high-power pulsed lasers based on separate-confinement double heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018),  46–52
8. Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:7 (2015),  1–7
9. On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range
   
   Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  716–718
10. High-voltage field-controlled integrated thyristor
    
    Zhurnal Tekhnicheskoi Fiziki, 83:1 (2013),  105–109
11. Injection ionization mechanism of current instability during switching off an integrated field controlled thyristor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:23 (2013),  18–25
12. Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:8 (2013),  9–16
13. High-voltage fast diode with “soft” recovery
    
    Zhurnal Tekhnicheskoi Fiziki, 81:10 (2011),  50–54
14. Reverse recovery of Si/Si$_{1-x}$Ge$_x$ heterodiodes fabricated by direct bonding
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011),  83–89
15. Electron irradiation controlled profile of recombination center concentration in silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:9 (2011),  105–110
16. Cascode turn-off of field-controlled integrated thyristors
    
    Zhurnal Tekhnicheskoi Fiziki, 80:1 (2010),  155–158
17. InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1640–1644
18. Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1135–1139
19. Ultrafast turn-off of high currents by field-controlled integrated thyristor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:19 (2010),  107–111