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Publications in Math-Net.Ru
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Combination of reactive-ion etching and chemical etching as a method for optimizing the surface relief on AlGaInN heterostructures
Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1106–1111
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Modification of the $n$-surface profile of AlGaInN LEDs by changing the gas-mixture composition during reactive ion etching
Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 564–569
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High-voltage alingan LED chips
Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1562–1567
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Formation of amorphous carbon nanoparticles by the laser electrodispersion method
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:5 (2018), 57–62
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Technique for forming ITO films with a controlled refractive index
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 1001–1006
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Use of double-layer ITO films in reflective contacts for blue and near-UV LEDs
Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1713–1718
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High-power AlGaInN LED chips with two-level metallization
Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1287–1293
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Optimization of the deposition technique of thin ITO films used as transparent conducting contacts for blue and near-UV LEDs
Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 61–66
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Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount
Fizika i Tekhnika Poluprovodnikov, 47:3 (2013), 386–391
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AlGaInN-based light emitting diodes with a transparent $p$-contact based on thin ITO films
Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 384–388
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