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Mokrushina Svetlana Andreena

Publications in Math-Net.Ru

  1. Model of behavior of MOS structures during radiation-thermal treatments

    Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024),  1843–1847
  2. Effect of ionizing radiation on charge distribution and breakdown of mosfets

    Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  250–253
  3. Model of the effect of the gate bias on MOS structures under ionizing radiation

    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  189–194
  4. Model for charge accumulation in $n$- and $p$-MOS transistors during tunneling electron injection from a gate

    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  637–642


© Steklov Math. Inst. of RAS, 2026