Karaseov Platon Aleksandrovich

Publications in Math-Net.Ru

1. Modification of near-surface layers of alpha-gallium oxide under irradiation with ultra-high ion doses
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  513–523
2. Analysis of individual collision cascade parameters during irradiation of $\beta$-Ga$_2$O$_3$ by atomic and molecular ions
   
   Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  738–742
3. Radiation damage accumulation in $\alpha$-Ga$_2$O$_3$ under P and PF$_4$ ion bombardment
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  882–887
4. Formation of Au nanoparticles and features of etching of a Si substrate under irradiation with atomic and molecular ions
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  90–96
5. Do chemical effects affect the accumulation of structural damage during the implantation of fluorine ions into GaN?
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1455–1458
6. Formation of radiation defects by proton braking in lightly doped $n$- and $p$-SiC layers
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  327–332
7. The effect of diborane additive on the plasma-chemical properties of deposited carbon films
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  80–88
8. Dislocation-related photoluminescence in silicon implanted with fluorine ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  14–20
9. Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si
   
   Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1009–1015
10. Nonlinear optical effect upon the irradiation of GaN with cluster ions
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  462–466
11. Damage formation in Si under irradiation with PF$^+_n$ ions of different energies
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  206–210