Karabeshkin Konstantin Valer'evich

Publications in Math-Net.Ru

1. Analysis of individual collision cascade parameters during irradiation of $\beta$-Ga$_2$O$_3$ by atomic and molecular ions
   
   Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  738–742
2. Radiation damage accumulation in $\alpha$-Ga$_2$O$_3$ under P and PF$_4$ ion bombardment
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  882–887
3. Silicon light-emitting diodes with luminescence from (113) defects
   
   Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  580–584
4. Formation of Au nanoparticles and features of etching of a Si substrate under irradiation with atomic and molecular ions
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  90–96
5. Do chemical effects affect the accumulation of structural damage during the implantation of fluorine ions into GaN?
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1455–1458
6. Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  437–440
7. Defect structure of GaAs layers implanted with nitrogen ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  24–30
8. The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  44–50
9. Dislocation-related photoluminescence in silicon implanted with fluorine ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  14–20
10. Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions
    
    Fizika Tverdogo Tela, 58:12 (2016),  2411–2414
11. Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si
    
    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1009–1015
12. Nonlinear optical effect upon the irradiation of GaN with cluster ions
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  462–466
13. Damage formation in Si under irradiation with PF$^+_n$ ions of different energies
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  206–210