Afanasyev Aleksei Valentinovich

Publications in Math-Net.Ru

1. 4H-SiC photodiodes with micronanostructured receiving surface
   
   Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  43–47
2. Application of RIE-technology to control responsivity of 4H-SiC photodiodes
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  997–1001
3. On the formation of low-resistivity contacts for 4H-SiC bipolar devices
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  607–610
4. Determination of thickness and doping features of multilayer $4H$–$\mathrm{SiC}$ structures by frequency analysis of IR reflection spectra
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022),  34–36
5. High-power 4$H$-SiC mosfet with an epitaxial buried channel
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  79–84
6. Method for increasing the carrier mobility in the channel of the 4$H$-SiC MOSFET
   
   Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  839–842
7. Specific features of the current–voltage characteristics of SiO$_{2}$/4$H$-SiC MIS structures with phosphorus implanted into silicon carbide
   
   Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  103–105
8. Capacitance-voltage characteristics of (Al/Ti)/Al$_2$O$_3$/$n$-GaN MIS structures
   
   Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1061–1064
9. On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO$_2$ produced by thermal oxidation in dry oxygen
   
   Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1621–1625
10. Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  83–86