Mikhaylov Aleksei Igorevich

Publications in Math-Net.Ru

1. High-power 4$H$-SiC mosfet with an epitaxial buried channel
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  79–84
2. Method for increasing the carrier mobility in the channel of the 4$H$-SiC MOSFET
   
   Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  839–842
3. Specific features of the current–voltage characteristics of SiO$_{2}$/4$H$-SiC MIS structures with phosphorus implanted into silicon carbide
   
   Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  103–105
4. On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO$_2$ produced by thermal oxidation in dry oxygen
   
   Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1621–1625