Abrosimova Natal'ya Dmitrievna

Publications in Math-Net.Ru

1. Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  668–675
2. Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure
   
   Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  1025–1031
3. Effect of hydrogen implantation dose on the relaxation of electrophysical characteristics of silicon-on-insulator structures after exposure to X-rays
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  753–758
4. Secondary-ion mass spectroscopy for analysis of the implanted hydrogen profile in silicon and impurity composition of silicon-on-insulator structures
   
   Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1850–1853
5. Formation of fluorine-containing defects and nanocrystals in SiO$_2$ upon implantation with fluorine, silicon, and germanium ions: Numerical simulation and photoluminescence spectroscopy
   
   Fizika Tverdogo Tela, 57:11 (2015),  2106–2111
6. Anomalous distribution of germanium implanted into a SOI dielectric layer after the annealing of radiation defects
   
   Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  631–635