Boldyrevskii Pavel Borisovich

Publications in Math-Net.Ru

1. Effect of substrate misorientation on the properties of $p$-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 92:10 (2022),  1582–1587
2. Atomic force microscopy examination of elementary processes in metalorganic compound hydride epitaxy of GaAs-based nanoheterostructures
   
   Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020),  826–830
3. Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers
   
   Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  219–223
4. Models of heat-and-mass transfer processes at vapor-phase epitaxy of semiconductor layers
   
   University proceedings. Volga region. Physical and mathematical sciences, 2017, no. 2,  91–107
5. Convective diffusion from gas to a rotating disk
   
   Prikl. Mekh. Tekh. Fiz., 57:4 (2016),  74–83
6. Analysis of thickness unevenness of the epitaxial silicon layer during deposition from sublimation sources in a vacuum
   
   University proceedings. Volga region. Physical and mathematical sciences, 2015, no. 4,  93–100
7. Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 84:11 (2014),  155–158