Kozhanova Yuliya Vladimirovna

Publications in Math-Net.Ru

1. LED structures based on ZnO films obtained by RF magnetron sputtering for the UV spectral range
   
   Zhurnal Tekhnicheskoi Fiziki, 90:3 (2020),  456–461
2. Parameters of ZnO semiconductor films doped with Mn and Fe 3$d$ impurities
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  18–21
3. Growth and structural, magnetic, and magnetooptical properties of ZnO films doped with a Fe$^{57}$ 3$d$ impurity
   
   Fizika Tverdogo Tela, 60:3 (2018),  596–602
4. Influence of silver and gold nanoparticles and thin layers on charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline zinc oxide films
   
   Zhurnal Tekhnicheskoi Fiziki, 88:4 (2018),  566–571
5. Formation of luminescence spectra and emission intensity in the UV and visible spectral regions for $n$-ZnO/$p$-GaN and $n$-ZnO/$p$-ZnO structures when depositing ZnO films by high-frequency magnetron sputtering
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1115–1119
6. Parameters of ZnO films with $p$-type conductivity deposited by high-frequency magnetron sputtering
   
   Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  588–593
7. UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1325–1332
8. Photoinduced defects in $a$-Si:H Films and InGaN/GaN multiple quantum well structures doped with Eu, Sm, and Eu + Sm
   
   Zhurnal Tekhnicheskoi Fiziki, 85:9 (2015),  97–104
9. Influence of the magnetic field strength and excitation intensity on the shape of microphotoluminescence spectra of quantum-well structures based on GaN/InGaN doped with Sm and Eu+Sm
   
   Fizika Tverdogo Tela, 55:5 (2013),  962–967
10. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm
    
    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  480–489
11. Intensity of emission from intracenter 4$f$-transitions in $a$-Si:H, ZnO, and GaN films doped with rare-earth ions
    
    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  925–936
12. Influence of the magnetic field and measurement temperature on the shape of microphotoluminescence spectra of Eu-Doped InGaN/GaN quantum-well structures
    
    Fizika Tverdogo Tela, 53:8 (2011),  1596–1603