Mikhaylov Aleksei Nikolaevich

Publications in Math-Net.Ru

1. Influence of oxygen vacancy concentration on the resistive switching parameters of ZrO$_2$(Y)-based memristor structures
   
   Zhurnal Tekhnicheskoi Fiziki, 95:9 (2025),  1733–1743
2. Memristors for non-volatile resistive memory based on an Al$_2$O$_3$/ZrO$_2$(Y) dielectric bilayer
   
   Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024),  1833–1842
3. A criterion for determination of the upper critical fields $H_{c2}$ in YBCO thin films with different ion irradiation doses
   
   Fizika Tverdogo Tela, 65:6 (2023),  907–913
4. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
5. Ion-irradiation effect on electron transport in YBCO thin films
   
   Fizika Tverdogo Tela, 64:9 (2022),  1162–1168
6. Experimental observation of $s$-component of superconducting pairing in thin disordered HTSC films based on YBCO
   
   Fizika Tverdogo Tela, 62:9 (2020),  1434–1439
7. Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1741–1749
8. Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide
   
   Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  298–304
9. Phase diagrams of thin disordered films based on HTSC YBa$_{2}$Cu$_{3}$O$_{7-x}$ in external magnetic fields
   
   Fizika Tverdogo Tela, 61:9 (2019),  1573–1578
10. Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers
    
    Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019),  927–934
11. Diffusion and interaction of In and As implanted into SiO$_2$ films
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1023–1029
12. The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  3–6
13. Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1436–1442
14. Effect of boron impurity on the light-emitting properties of dislocation structures formed in silicon by Si$^{+}$ ion implantation
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  702–707
15. Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  651–655
16. Simulation of synaptic coupling of neuron-like generators via a memristive device
    
    Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017),  1248–1254
17. Formation of hexagonal 9$R$ silicon polytype by ion implantation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017),  87–92
18. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$
    
    Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016),  107–111
19. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  274–278
20. Si:Si LEDs with room-temperature dislocation-related luminescence
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  241–244
21. Resistive switching in Au/SiO$_{x}$/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  17–24
22. Formation of fluorine-containing defects and nanocrystals in SiO$_2$ upon implantation with fluorine, silicon, and germanium ions: Numerical simulation and photoluminescence spectroscopy
    
    Fizika Tverdogo Tela, 57:11 (2015),  2106–2111
23. The effect of irradiation with H$^+$ and Ne$^+$ ions on resistive switching in metal–insulator–metal memristive structures based on SiO$_x$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  81–89
24. Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities
    
    Fizika Tverdogo Tela, 56:3 (2014),  607–610
25. Effect of ion doping on the dislocation-related photoluminescence in Si$^+$-implanted silicon
    
    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  212–216
26. Resistive switching in metal-insulator-metal structures based on germanium oxide and stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:3 (2014),  12–19
27. Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films
    
    Fizika Tverdogo Tela, 55:11 (2013),  2243–2249
28. Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation
    
    Fizika Tverdogo Tela, 54:2 (2012),  370–377
29. Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in SiO$_2$ and matrices
    
    Fizika Tverdogo Tela, 54:2 (2012),  347–359
30. Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix
    
    Zhurnal Tekhnicheskoi Fiziki, 82:12 (2012),  63–66
31. Photoluminescence of porous silicon saturated with tungsten-tellurite glass with rare-earth metal impurities
    
    Fizika Tverdogo Tela, 53:12 (2011),  2294–2298
32. Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO$_x$/ZrO$_2$ system containing Si nanoclusters
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  747–753
33. Formation and “white” photoluminescence of nanoclusters in SiO$_x$ films implanted with carbon ions
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1498–1503