Tikhov Stanislav Viktorovich

Publications in Math-Net.Ru

1. Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1741–1749
2. Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide
   
   Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  298–304
3. Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers
   
   Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019),  927–934
4. Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1436–1442
5. Plasmon resonance induced photoconductivity in the yttria stabilized zirconia films with embedded Au nanoclusters
   
   Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  470
6. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$
   
   Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016),  107–111
7. Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1639–1643
8. Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1615–1619
9. Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  78–84
10. Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016),  52–60
11. Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  145–148
12. Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing $\delta$-doped layers
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  53–57
13. The forming process in resistive-memory elements based on metal–insulator–semiconductor structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:19 (2014),  18–26
14. Capacitors with nonlinear characteristics based on stabilized zirconia with built-in gold nanoparticles
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  9–16
15. Features of Fermi-level pinning at the interface of Al$_{0.3}$Ga$_{0.7}$As with anodic oxide and stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:23 (2013),  72–79
16. Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1561–1565
17. Determination of the electron concentration and mobility in the vicinity of a quantum well and $\delta$-doped layer in InGaAs/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1532–1536
18. Small-signal field effect in GaAs/InAs quantum-dot heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1297–1303
19. Long-range effect of the irradiation of silicon with light on the Schottky-barrier photovoltage
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  641–643