Shabunina Evgeniya Igorevna

Publications in Math-Net.Ru

1. Радиационная стойкость датчиков МНПВО на основе двойных гетероструктур $p$-InAsSbP/$n$-InAs, облученных гамма-квантами
   
   Zhurnal Tekhnicheskoi Fiziki, 96:1 (2026),  112–121
2. Исследование предельных энергетических возможностей мощных ультрафиолетовых (370 nm) матричных излучателей: токовый и температурный факторы
   
   Optics and Spectroscopy, 133:11 (2025),  1172–1175
3. Reduction of external quantum efficiency of ultraviolet LEDs caused by overdoping of barriers with silicon
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  397–401
4. Graphene-based biosensors for neurodegenerative dementia detection
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:3 (2025),  13–16
5. Study of stress relief and strain distribution in graphene films of biosensors for viral infections
   
   Fizika Tverdogo Tela, 65:12 (2023),  2216–2219
6. Participation of defects localized at heterointerfaces and extended defects in the degradation of nitride-based light-emitting devices
   
   Optics and Spectroscopy, 131:11 (2023),  1499–1501
7. Modification in adsorption properties of graphene during the development of viral biosensors
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1137–1143
8. Temperature-dependent decrease in efficiency in power blue InGaN/GaN LEDs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  45–48
9. Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1604–1608
10. Effect of electron irradiation with an energy of 0.9 MeV on the I–V characteristics and low-frequency noise in 4$H$-SiC pin diodes
    
    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  555–561
11. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
12. On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1195–1201
13. Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014),  73–80
14. Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  219–223
15. Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  425–431