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Publications in Math-Net.Ru
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Peculiarities of the current–voltage characteristic of $n$-GaP–$p$-(InSb)$_{1-x}$(Sn$_{2}$)$_{x}$ heterostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 23–26
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Effect of injection depletion in $p$-Si–$n$-(Si$_{2}$)$_{1-x}$(ZnSe)$_{x}$ (0 $\le x\le$ 0.01) heterostructure
Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1066–1070
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Growth, structure, and properties of GaAs-based (GaAs)$_{1-x-y}$(Ge$_{2}$)$_{x}$(ZnSe)$_{y}$ epitaxial films
Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 60–66
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Liquid-phase epitaxy of the (Si$_2$)$_{1-x-y}$(Ge$_2$)$_x$(GaAs)$_y$ substitutional solid solution (0 $\le x\le$ 0.91, 0 $\le y\le$ 0.94) and their electrophysical properties
Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 557–560
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Effect of injection depletion in $p$–$n$ heterostructures based on solid solutions (Si$_2$)$_{1-x-y}$(Ge$_2$)$_x$(GaAs)$_y$, (Si$_2$)$_{1-x}$(CdS)$_x$, (InSb)$_{1-x}$(Sn$_2$)$_x$, and CdTe$_{1-x}$S$_x$
Fizika Tverdogo Tela, 56:12 (2014), 2319–2325
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Structural and some electrophysical properties of the solid solutions Si$_{1-x}$Sn$_x$ (0 $\le x\le$ 0.04)
Fizika Tverdogo Tela, 55:1 (2013), 36–43
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Growth of Ge$_{1-x}$Sn$_x$ solid solution films and study of their structural properties and some of their photoelectric properties
Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1111–1119
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Growth of (GaAs)$_{1-x}$(ZnSe)$_x$ solid solution films and investigation of their structural and some photoelectric properties
Fizika Tverdogo Tela, 53:10 (2011), 1910–1919
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Growth of (InSb)$_{1-x}$(Sn$_2$)$_x$ films on GaAs substrates by liquid-phase epitaxy
Fizika i Tekhnika Poluprovodnikov, 44:7 (2010), 970–977
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Study of the current-voltage characteristic of the $n$-CdS/$p$-CdTe heterostructure depending on temperature
Fizika i Tekhnika Poluprovodnikov, 44:3 (2010), 330–334
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Structure and photoelectric properties of Si$_{1-x}$Sn$_x$ epilayers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:17 (2010), 104–110
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