Gagis Galina Sergeevna

Publications in Math-Net.Ru

1. Формирование твердых растворов InPAs методом твердофазного замещения
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:6 (2026),  49–52
2. Optical characterization of InGaAsP/InP(001) heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:15 (2024),  47–50
3. Solid-phase substitution processes with phosphorus in InAs and InSb
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  20–22
4. Obtaining anisotypic heterostructures for a GaSb-based photovoltaic converter due to solid-phase substitution reactions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:21 (2022),  3–5
5. Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  22–24
6. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
7. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
8. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
9. A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  78–86
10. Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  3–9
11. Formation of III–V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  984–988
12. Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:10 (2013),  49–53
13. AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3–5 $\mu$m spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012),  66–74
14. Properties of narrow-bandgap (0.3–0.48 eV) A$^3$B$^5$ solid solution epilayers grown by metal-organic chemical vapor deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  23–30