Zubov Alexandr Victorovich

Publications in Math-Net.Ru

1. On the dipole–dipole interaction of atoms in the layers adsorbed on three- and two-dimensional semiconductors
   
   Fizika Tverdogo Tela, 62:8 (2020),  1302–1305
2. Development of the processing technique and study of microwave switches based on 4$H$-SiC $p$–$i$–$n$ diodes
   
   Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  264–267
3. Raman studies of graphene films grown on 4$H$-SiC subjected to deposition of Ni
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1388
4. 2D SiC/Si structure: electron states and adsorbability
   
   Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  663–669
5. Exactly solvable model problem on a graphene nanoribbon with zigzag edges
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  170–175
6. Model estimates of the quantum capacitance of graphene-like nanostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  19–21
7. Terahertz near-field response in graphene ribbons
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  29–32
8. Model estimates of the quantum capacitance of graphene nanostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  7–9
9. Studying the sensitivity of graphene for biosensor applications
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  3–6
10. Cobalt intercalation of graphene on silicon carbide
    
    Fizika Tverdogo Tela, 61:7 (2019),  1374–1384
11. Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1448–1452
12. Coulomb electron interaction between an adsorbate and substrate: a model of a surface dimer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019),  21–23
13. A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  28–30
14. A model of a surface dimer in the problem of adsorption
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:9 (2019),  40–42


15. Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1383